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Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires (Articolo in rivista)
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- Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires (Articolo in rivista) (literal)
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- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/nn503629d (literal)
- Alternative label
Carapezzi, Stefania[ 1 ] ; Priante, Giacomo[ 2 ] ; Grillo, Vincenzo[ 3,4 ] ; Montes, Laurent[ 5 ] ; Rubini, Silvia[ 2 ] ; Cavallini, Anna[ 1 ] (2014)
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires
in ACS nano; American Chemical Society, Washington (Stati Uniti d'America)
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- Carapezzi, Stefania[ 1 ] ; Priante, Giacomo[ 2 ] ; Grillo, Vincenzo[ 3,4 ] ; Montes, Laurent[ 5 ] ; Rubini, Silvia[ 2 ] ; Cavallini, Anna[ 1 ] (literal)
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- [ 1 ] Univ Bologna, Dept Phys & Astron, I-40127 Bologna, Italy
[ 2 ] CNR, Ist Officina Mat, Lab TASC, I-34149 Trieste, Italy
[ 3 ] Ist Nanosci, I-41125 Modena, Italy
[ 4 ] CNR IMEM, I-43100 Parma, Italy
[ 5 ] Grenoble Univ, MINATEC, IMEP LAHC, F-38016 Grenoble, France (literal)
- Titolo
- Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires (literal)
- Abstract
- The origin of deflections of semiconductor nanowires (NWs) induced by an electron beam in scanning electron microscopy has been subject to different interpretations. Similarly, the subsequent clumping together of NWs into bundles is frequently observed, but no interpretation has yet been advanced. Here we present results on the bundling of NWs following the intentional bending by an electron beam. Furthermore, we extend the concept of lateral collapse, usually applied to fibrillar architectures mimicking the adhesiveness of natural surfaces (the so-called Gecko effect), to analyze the mechanism of the NW bundle formation. We demonstrate how the geometry of the NW arrays and the mechanical properties of the composing materials govern bundling and how these parameters should be taken into account in the design of NW arrays both for avoiding vertical misalignment when detrimental and for achieving patterning of NW arrays into nanoarchitectures. (literal)
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