Correlation between morphology and transport properties of quasi-free-standing monolayer graphene (Articolo in rivista)

Type
Label
  • Correlation between morphology and transport properties of quasi-free-standing monolayer graphene (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4902988 (literal)
Alternative label
  • Murata Y.[ 1,2 ] ; Mashoff T.[ 3 ] ; Takamura M.[ 4 ]; Tanabe S.[ 4 ] ; Hibino H.[ 4 ]; Beltram F.[ 1,2,3 ] ; Heun S.[ 1,2 ] (2014)
    Correlation between morphology and transport properties of quasi-free-standing monolayer graphene
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Murata Y.[ 1,2 ] ; Mashoff T.[ 3 ] ; Takamura M.[ 4 ]; Tanabe S.[ 4 ] ; Hibino H.[ 4 ]; Beltram F.[ 1,2,3 ] ; Heun S.[ 1,2 ] (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84914133262&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 105 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 22 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Ist Nanosci CNR, NEST, I-56127 Pisa, Italy [ 2 ] Scuola Normale Super Pisa, I-56127 Pisa, Italy [ 3 ] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy [ 4 ] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan (literal)
Titolo
  • Correlation between morphology and transport properties of quasi-free-standing monolayer graphene (literal)
Abstract
  • We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800°C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000°C, and they decrease the carrier mobility significantly. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it