http://www.cnr.it/ontology/cnr/individuo/prodotto/ID310633
Correlation between morphology and transport properties of quasi-free-standing monolayer graphene (Articolo in rivista)
- Type
- Label
- Correlation between morphology and transport properties of quasi-free-standing monolayer graphene (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.4902988 (literal)
- Alternative label
Murata Y.[ 1,2 ] ; Mashoff T.[ 3 ] ; Takamura M.[ 4 ]; Tanabe S.[ 4 ] ; Hibino H.[ 4 ]; Beltram F.[ 1,2,3 ] ; Heun S.[ 1,2 ] (2014)
Correlation between morphology and transport properties of quasi-free-standing monolayer graphene
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Murata Y.[ 1,2 ] ; Mashoff T.[ 3 ] ; Takamura M.[ 4 ]; Tanabe S.[ 4 ] ; Hibino H.[ 4 ]; Beltram F.[ 1,2,3 ] ; Heun S.[ 1,2 ] (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.scopus.com/inward/record.url?eid=2-s2.0-84914133262&partnerID=q2rCbXpz (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Ist Nanosci CNR, NEST, I-56127 Pisa, Italy
[ 2 ] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[ 3 ] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy
[ 4 ] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan (literal)
- Titolo
- Correlation between morphology and transport properties of quasi-free-standing monolayer graphene (literal)
- Abstract
- We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800°C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000°C, and they decrease the carrier mobility significantly. (literal)
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