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Structural, Electronic, and Electrical Properties of an Undoped n-Type CdO Thin Film with High Electron Concentration (Articolo in rivista)
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- Structural, Electronic, and Electrical Properties of an Undoped n-Type CdO Thin Film with High Electron Concentration (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/jp5040085 (literal)
- Alternative label
Cristaldi, Domenico A.; Millesi, Salvatrice; Crupi, Isodiana; Impellizzeri, Giuliana; Priolo, Francesco; Jacobs, Robert M. J.; Egdell, Russell G.; Gulino, Antonino (2014)
Structural, Electronic, and Electrical Properties of an Undoped n-Type CdO Thin Film with High Electron Concentration
in Journal of physical chemistry. C
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cristaldi, Domenico A.; Millesi, Salvatrice; Crupi, Isodiana; Impellizzeri, Giuliana; Priolo, Francesco; Jacobs, Robert M. J.; Egdell, Russell G.; Gulino, Antonino (literal)
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- ISI Web of Science (WOS) (literal)
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- University of Catania; INSTM UdR Catania; Consiglio Nazionale delle Ricerche (CNR); University of Catania; Scuola Super Catania; University of Oxford (literal)
- Titolo
- Structural, Electronic, and Electrical Properties of an Undoped n-Type CdO Thin Film with High Electron Concentration (literal)
- Abstract
- Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of other systems are therefore of interest as potential alternatives to Sn-doped In2O3. Recently, CdO has received considerable attention because of its high intrinsic dopability, which coupled with excellent Hall mobilities gives a high electrical conductivity. In the present study we have explored the structure, electronic, and electrical properties of CdO thin films prepared by a simple metalloorganic chemical vapor deposition route. The techniques employed include X-ray diffraction, atomic force microscopy, photoelectron spectroscopy, optical absorption spectroscopy, and luminescence measurements. Electrical properties were characterized by four-point probe and Hall effect measurements in the temperature range between 80 and 460 K. The electrical measurements demonstrated that the CdO thin films are degenerate semiconductors, with free-electron concentrations of around 7 x 10(20) cm(-3) provided by native donors. (literal)
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