P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation (Contributo in atti di convegno) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1557/opl.2014.600 (literal)

Alternative label

• R. Nipoti, M. Puzzanghera and F. Moscatelli (2014)
  P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
  in MRS Spring Meeting, San Francisco, CA, USA, 22-24 April, 2014
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• R. Nipoti, M. Puzzanghera and F. Moscatelli (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://journals.cambridge.org/article_S1946427414006009 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Symposium DD - Silicon Carbide-Materials, Processing and Devices (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 1693 (literal)

Rivista

• MRS proceedings (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, UOS of Bologna; CNR-IMM, UOS of Bologna; CNR-IMM, UOS of Bologna (literal)

Titolo

• P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation (literal)

Abstract

• Two n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO MOSCATELLI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ROBERTA NIPOTI (Unità di personale interno)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID23670
• FRANCESCO MOSCATELLI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• MRS proceedings (Rivista)

Insieme di parole chiave di

• Parole chiave di "P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation" (Insieme di parole chiave)