Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices (Brevetto)

Type
Label
  • Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices (Brevetto) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • Camarda M. , Sevrino A., La Via F. (2012)
    Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
    (literal)
Titolo
  • Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Camarda M. , Sevrino A., La Via F. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#proprieta
  • CNR-IMM (literal)
Http://www.cnr.it/ontology/cnr/brevetti.owl#tipoDiBrevetto
  • Internazionale (literal)
Numero brevetto
  • 14/235,430 (literal)
Anno di deposito
  • 2012 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices (literal)
Abstract
  • A method is provided for fabricating a wafer of semiconductor material intended for use for the integration of electronic and/or optical and/or optoelectronic devices. The method comprises: providing a starting wafer of crystalline silicon (205); on the starting wafer of crystalline silicon, epitaxially growing a buffer layer (210) consisting of a sub-stoichiometric alloy of silicon and germanium; epitaxially growing on the buffer layer a layer (225) of a semiconductor material having an energy gap greater than that of the crystalline silicon constituting the starting wafer, wherein the layer of semiconductor material having an energy gap greater than that of the crystalline silicon is grown so to have a thickness capable of constituting a substrate for the integration therein of electronic and/or optical and/or optoelectronic devices. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
data.CNR.it