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Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates (Articolo in rivista)

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Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates (Articolo in rivista) (literal)

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Von Kanel H.; Isa F.; Falub C.V.; Barthazy E.J.; Muller E.; Chrastina D.; Isella G.; Kreiliger T.; Taboada A.G.; Meduna M.; Kaufmann R.; Neels A.; Dommann A.; Niedermann P.; Mancarella F.; Mauceri M.; Puglisi M.; Crippa D.; La Via F.; Anzalone R.; Piluso N.; Bergamaschini R.; Marzegalli A.; Miglio L. (2014)
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates
in ECS transactions
(literal)

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Von Kanel H.; Isa F.; Falub C.V.; Barthazy E.J.; Muller E.; Chrastina D.; Isella G.; Kreiliger T.; Taboada A.G.; Meduna M.; Kaufmann R.; Neels A.; Dommann A.; Niedermann P.; Mancarella F.; Mauceri M.; Puglisi M.; Crippa D.; La Via F.; Anzalone R.; Piluso N.; Bergamaschini R.; Marzegalli A.; Miglio L. (literal)

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Laboratoy for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, Zurich, 8093, Switzerland; L-NESS, Dipartimento di Fisica Del Politecnico di Milano, Via Anzani 42, Como, 22100, Italy; Electron Microscopy Center, ETH Zurich, Auguste-Piccard-Hof 1, Zurich, 8093, Switzerland; Dep. of Cond. Mat. Physics and CEITEC, Masaryk University, Kotlá?ská 2, Brno, 61137, Czech Republic; Empa, Center for X-ray Analytics, Überlandstrasse 129, Dübendorf, 8600, Switzerland; Centre Suisse d'Electronique et de Microtechnique, Jaquet-Droz 1, Neuchatel, 2002, Switzerland; CNR-IMM of Bologna, Via Gobetti 101, Bologna, 40129, Italy; Epitaxial Technology Center Srl, 16a Strada, Contrada Torre Allegra, Catania, 95121, Italy; LPE S.p.A., Via Falzarego 8, Baranzate (MI), 20021, Italy; CNR-IMM, Z.I. Strada VIII, Catania, 95121, Italy; L-NESS, Dep. of Materials Science, Università di Milano-Bicocca, via Cozzi 55, Milan, 20126, Italy; OC Oerlikon Advanced Technologies, Iramali 18, Balzers, 9496, Liechtenstein; Electron Microscopy Facility, Paul Scherrer Institute, Villigen, 5232, Switzerland; Camlin Technologies CH, Technoparkstrasse 1, Zurich, 8005, Switzerland (literal)

Titolo

Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates (literal)

Abstract

We show that geometric shielding of the reactive flux in chemical vapor deposition by tall neighboring structures obtained by deep substrate patterning, along with short surface diffusion lengths, can provide nearly space filling arrays of high-quality epitaxial crystals despite large mismatches of lattice parameters and thermal expansion coefficients. The density of extended defects is strongly reduced by the method, and wafer bowing and crack formation largely inhibited. The concept is shown to be valid for SiGe/Si heterostructures ranging from pure Si to pure Ge both on Si(001) and Si(111) substrates. Here, dislocations are efficiently eliminated from three-dimensional faceted crystals with high-aspect ratios on top of micron-sized Si pillars. The application to 3C-SiC/Si(001) ridges, characterized by a lattice mismatch of nearly 20%, provides significantly lower stacking fault densities compared with layers grown on planar substrates. (literal)

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