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The formation of anomalous Hall effect depending on W atoms in ZnO thin films (Articolo in rivista)
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- The formation of anomalous Hall effect depending on W atoms in ZnO thin films (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.apsusc.2014.02.079 (literal)
- Alternative label
Can, Musa Mutlu; Shah, S. Ismat; Firat, Tezer (2014)
The formation of anomalous Hall effect depending on W atoms in ZnO thin films
in Applied surface science
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- Can, Musa Mutlu; Shah, S. Ismat; Firat, Tezer (literal)
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- ISI Web of Science (WOS) (literal)
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- Sabanci University; University of Naples Federico II; University of Delaware; Hacettepe University (literal)
- Titolo
- The formation of anomalous Hall effect depending on W atoms in ZnO thin films (literal)
- Abstract
- article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for similar to 0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5 K to 300 K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5 K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (R-xy(H)) curves for the thin film with high amount of Zn2+ and W6+ ionic defects. (C) 2014 Elsevier B.V. All rights reserved. (literal)
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