Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I-2-assisted focused ion beam (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I-2-assisted focused ion beam (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2364833 (literal)

Alternative label

• Gazzadi, GC; Angeli, E; Facci, P; Frabboni, S (2006)
  Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I-2-assisted focused ion beam
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Gazzadi, GC; Angeli, E; Facci, P; Frabboni, S (literal)

Pagina inizio

• 173112 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 89 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 17 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM, CNR, I-41100 Modena, Italy; Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy (literal)

Titolo

• Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I-2-assisted focused ion beam (literal)

Abstract

• Iodine (I-2)-assisted, 30 keV Ga+ focused ion beam (FIB) has been employed to fabricate nanogap Au electrodes and has been compared to conventional FIB milling. Electrical characterization shows that I-2 assistance improves insulation resistance from 300-400 G Omega to 20-50 T Omega. Auger depth profiling reveals that the Ga concentration profile in FIB-milled samples has a peak value of 25 at. % at 7 nm and extends, with a decreasing Gaussian tail, down to 40 nm, whereas in I-2-processed samples Ga concentration is reduced below 5 at. %. I-2 assistance is found to increase minimum gap size from 8 to 16 nm and to markedly roughen Au surface morphology. (c) 2006 American Institute of Physics. (literal)

Prodotto di

• Nanobiosistemi (MD.P06.010.001) (Modulo)
• Nanofabbricazione e fenomeni di superficie interfaccia alla nanoscala (MD.P06.013.001) (Modulo)

Autore CNR

• PAOLO FACCI (Persona)
• GIANCARLO GAZZADI (Persona)
• STEFANO FRABBONI (Unità di personale esterno)

Incoming links:

Autore CNR di

• PAOLO FACCI (Persona)
• GIANCARLO GAZZADI (Persona)
• STEFANO FRABBONI (Unità di personale esterno)

Prodotto

• Nanofabbricazione e fenomeni di superficie interfaccia alla nanoscala (MD.P06.013.001) (Modulo)
• Nanobiosistemi (MD.P06.010.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)