http://www.cnr.it/ontology/cnr/individuo/prodotto/ID307654
Amplitude sensitive experiment of pairing symmetry in d0-d0 submicron Y-Ba-Cu-O bicrystal grain boundary junctions (Articolo in rivista)
- Type
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- Amplitude sensitive experiment of pairing symmetry in d0-d0 submicron Y-Ba-Cu-O bicrystal grain boundary junctions (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1088/0953-2048/26/10/105013 (literal)
- Alternative label
E Sarnelli, M Adamo, S De Nicola, S Cibella, R Leoni, C Nappi (2013)
Amplitude sensitive experiment of pairing symmetry in d0-d0 submicron Y-Ba-Cu-O bicrystal grain boundary junctions
in Superconductor science and technology (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- E Sarnelli, M Adamo, S De Nicola, S Cibella, R Leoni, C Nappi (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1 CNR Istituto di Cibernetica 'E Caianiello', Via Campi Flegrei 34, I-80078, Pozzuoli, Napoli, Italy
2 CNR-SPIN, Monte S Angelo, Via Cinthia, I-80126 Napoli, Italy
3 CNR, Istituto Nazionale di Ottica, Via Campi Flegrei 34, I-80078, Pozzuoli, Napoli, Italy
4 INFN Sezione di Napoli, Complesso Universitario di Monte S Angelo, Via Cinthia, I-80126 Napoli, Italy
5 CNR Istituto di Fotonica e Nanotecnologie, I-00156 Roma, Italy (literal)
- Titolo
- Amplitude sensitive experiment of pairing symmetry in d0-d0 submicron Y-Ba-Cu-O bicrystal grain boundary junctions (literal)
- Abstract
- We have fabricated and analyzed submicron YBa2Cu3O7-x grain boundary Josephson junctions grown on [100] tilt SrTiO3 bicrystal substrates. We present an experiment sensitive to the amplitude of the order parameter. To this aim, we have measured electrical properties of [100] tilt bicrystal YBa2Cu3O7-x grain boundary junctions with nominal widths of 700 nm and 300 nm. Junctions are fabricated so that positive lobes of the d-wave electrodes face one another (d0-d0 junction). We demonstrate that, in such devices, the temperature dependences of the critical current may be accounted for by very high-transparency junction barriers, in which the influence of nodes in the pair potential is an essential element. We based our analysis on a recent theoretical model that, starting from the Bogoliubov-de Gennes equations, takes into account the presence of Andreev bound states in layered superconductors, with Cu-O planes tilted with respect the substrate plane, as is the case of [100] tilt grain boundary junctions. (literal)
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