Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide (Articolo in rivista)

Type
Label
  • Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4890619 (literal)
Alternative label
  • Rubano, Andrea; Wolf, Martin; Kampfrath, Tobias (2014)
    Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rubano, Andrea; Wolf, Martin; Kampfrath, Tobias (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 105 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Max Planck Society; University of Naples Federico II; Ist SPIN CNR (literal)
Titolo
  • Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide (literal)
Abstract
  • The terahertz (THz) conductivity of photoinduced charge carriers in two common polytypes of silicon carbide, 3C-SiC and 6H-SiC, is studied on picosecond time scales using an optical-pump THz-probe technique. We find that the conductivity, measured from 0.7 to 3 THz, is well described by the Drude model, and obtain a velocity relaxation time of 75 fs, independent of sample and charge-carrier density. In contrast, the carrier relaxation rates in the two polytypes differ by orders of magnitude: in 6H- and 3C-SiC, recombination proceeds on a time scale of few picoseconds and beyond nanoseconds, respectively. (C) 2014 AIP Publishing LLC. (literal)
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