Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates (Articolo in rivista)

Type
Label
  • Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jcrysgro.2013.12.065 (literal)
Alternative label
  • Scaccabarozzi A.; Bietti S.; Fedorov A.; Von Kanel H.; Miglio L.; Sanguinetti S. (2014)
    Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Scaccabarozzi A.; Bietti S.; Fedorov A.; Von Kanel H.; Miglio L.; Sanguinetti S. (literal)
Pagina inizio
  • 559 (literal)
Pagina fine
  • 562 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84906959180&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 401 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • L-NESS, Dipartimento di Scienza Dei Materiali, Università di Milano Bicocca, Via Cozzi 53, Milano, I-20125, Italy; CNR-IFN, Via Anzani 42, Como, I-22100, Italy; Laboratory for Solid State Physics, ETH Zürich, Schafmattstrasse 16, Zürich, CH-8093, Switzerland (literal)
Titolo
  • Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates (literal)
Abstract
  • We report on thermal strain relaxation in heteroepitaxial three dimensional crystals of GaAs grown on deeply patterned Si(001) substrates. The relaxation of the thermal strain induced by the three dimensionality and micrometric size of the GaAs crystals is investigated by comparing different pattern geometries. We exploit photoluminescence measurements to accurately evaluate the amount of residual strain. Our results confirm that deep substrate patterning is an effective way to relax the thermal strain of heteroepitaxial GaAs/Si. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it