http://www.cnr.it/ontology/cnr/individuo/prodotto/ID305461
Analytical drain current model of both p- and n-channel OTFTs for circuit simulation (Contributo in atti di convegno)
- Type
- Label
- Analytical drain current model of both p- and n-channel OTFTs for circuit simulation (Contributo in atti di convegno) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Alternative label
F. Torricelli, M. Ghittorelli, M. Rapisarda, L. Mariucci, S. Jacob, R. Coppard, E. Cantatore, Zs. M. Kovacs-Vajna, L. Colalongo (2014)
Analytical drain current model of both p- and n-channel OTFTs for circuit simulation
in SISPAD 2014 - Int. Conference on Simulation of Semiconductor Processes and Devices, Yokohama (Japan), Sep. 2014
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Torricelli, M. Ghittorelli, M. Rapisarda, L. Mariucci, S. Jacob, R. Coppard, E. Cantatore, Zs. M. Kovacs-Vajna, L. Colalongo (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Department of Information Engineering, University of Brescia;
CNR-IMM;
CEA-LITEN;
Eindhoven University of Technology, Department of Electrical Engineering, Eindhoven (literal)
- Titolo
- Analytical drain current model of both p- and n-channel OTFTs for circuit simulation (literal)
- Abstract
- Organic thin-film transistors (OTFTs) are an emerging technology for large scale circuit integration, owing the
availability of both p- and n- channel devices. For the technology development and the design of circuits and digital systems, the
accurate physical modeling is mandatory. In this work we propose an unified analytical model for both p- and n- type OTFTs. The
model is physically based and accounts for a double exponential density of states (DOS). It is simple, symmetric and accurately
describes the below-threshold, linear, and saturation regimes via a unique formulation. The model is eventually validated with the
measurements of complementary OTFTs fabricated in a fullyprinted technology. (literal)
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