http://www.cnr.it/ontology/cnr/individuo/prodotto/ID305015
Engineering relativistic effects in ferroelectric SnTe (Articolo in rivista)
- Type
- Label
- Engineering relativistic effects in ferroelectric SnTe (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevB.90.161108 (literal)
- Alternative label
Plekhanov, E.; Barone, P.; Di Sante, D.; Picozzi, S. (2014)
Engineering relativistic effects in ferroelectric SnTe
in Physical review. B, Condensed matter and materials physics
(literal)
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- Plekhanov, E.; Barone, P.; Di Sante, D.; Picozzi, S. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Consiglio Nazionale delle Ricerche (CNR); University of Aquila (literal)
- Titolo
- Engineering relativistic effects in ferroelectric SnTe (literal)
- Abstract
- Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a semiconductor featuring topologically nontrivial properties, such as SnTe, merges the intriguing field of spin-orbit-driven physics with nonvolatile functionalities appealing for spintronics. By using a variety of modeling techniques, we show that a strikingly rich sequence of phases can be induced in SnTe, when going from a room-temperature cubic phase to a low-temperature ferroelectric structure, ranging from a topological crystalline insulator to a time-reversal-invariant Z(2) topological insulator to a \"ferroelectric Rashba semiconductor,\" exhibiting a huge electrically controllable Rashba effect in the bulk band structure. (literal)
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