An innovative Yb-based ultrafast deep ultraviolet source for time-resolved photoemission experiments (Articolo in rivista)

Type
Label
  • An innovative Yb-based ultrafast deep ultraviolet source for time-resolved photoemission experiments (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4903347 (literal)
Alternative label
  • Boschini, F.; Hedayat, H.; Dallera, Claudia; Farinello, Paolo; Manzoni, Cristian; Magrez, Arnaud; Berger, Helmuth; Cerullo, Giulio; Carpene, Ettore (2014)
    An innovative Yb-based ultrafast deep ultraviolet source for time-resolved photoemission experiments
    in Review of scientific instruments
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Boschini, F.; Hedayat, H.; Dallera, Claudia; Farinello, Paolo; Manzoni, Cristian; Magrez, Arnaud; Berger, Helmuth; Cerullo, Giulio; Carpene, Ettore (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/record/display.url?eid=2-s2.0-84916624802&origin=inward (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 85 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Politecnico di Milano; Universita degli Studi di Pavia; Ecole Polytechnique Federale de Lausanne (literal)
Titolo
  • An innovative Yb-based ultrafast deep ultraviolet source for time-resolved photoemission experiments (literal)
Abstract
  • Time- and angle-resolved photoemission spectroscopy is a powerful technique to study ultrafast electronic dynamics in solids. Here, an innovative optical setup based on a 100-kHz Yb laser source is presented. Exploiting non-collinear optical parametric amplification and sum-frequency generation, ultrashort pump (hv = 1.82 eV) and ultraviolet probe (hv = 6.05 eV) pulses are generated. Overall temporal and instrumental energy resolutions of, respectively, 85 fs and 50 meV are obtained. Time- and angle-resolved measurements on BiTeI semiconductor are presented to show the capabilities of the setup. (literal)
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