P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation (Comunicazione a convegno)

Type
Label
  • P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation (Comunicazione a convegno) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Alternative label
  • R. Nipoti, M. Puzzanghera, F. Moscatelli (2014)
    P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
    in MRS Spring Meeting & Exhibit, Symposym DD, San Francisco, April 22-24, 2014
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R. Nipoti, M. Puzzanghera, F. Moscatelli (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM-UOS of Bologna, CNR-IMM-UOS of Bologna, CNR-IMM-UOS of Bologna (literal)
Titolo
  • P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation (literal)
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Autore CNR

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