DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.apsusc.2014.05.225 (literal)

Alternative label

• Miccoli, I.; Spampinato, R.; Marzo, F.; Prete, P.; Lovergine, N. (2014)
  DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets
  in Applied surface science; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Miccoli, I.; Spampinato, R.; Marzo, F.; Prete, P.; Lovergine, N. (literal)

Pagina inizio

• 418 (literal)

Pagina fine

• 423 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 313 (literal)

Rivista

• Applied surface science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Photoyolta R&D Lab; University of Salento; Consiglio Nazionale delle Ricerche (CNR) (literal)

Titolo

• DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets (literal)

Abstract

• High (>350 degrees C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al2O3 (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO-Al2O3 (AZO) powders. The original combination of high-angle theta-2 theta(Bragg-Brentano geometry) X-ray diffraction with low angle theta-2 theta X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl2O4 phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13-20 nm range and increasing with temperature between 350 degrees C and 450 degrees C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 degrees C and 450 degrees C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence with temperature. ZnO:Al films appear highly transparent, with visible-NIR integrated transmittance >97%. (C) 2014 Elsevier B.V. All rights reserved. (literal)
• High (>350 degrees C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al2O3 (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO-Al2O3 (AZO) powders. The original combination of high-angle theta-2 theta(Bragg-Brentano geometry) X-ray diffraction with low angle theta-2 theta X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl2O4 phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13-20 nm range and increasing with temperature between 350 degrees C and 450 degrees C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 degrees C and 450 degrees C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence with temperature. ZnO:Al films appear highly transparent, with visible-NIR integrated transmittance >97%. (literal)

Editore

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• PAOLA PRETE (Persona)

Insieme di parole chiave

• Parole chiave di "DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• PAOLA PRETE (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)

Editore di

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Insieme di parole chiave di

• Parole chiave di "DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets" (Insieme di parole chiave)