Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/pssr.201308046 (literal)

Alternative label

• Prete, Paola; Miccoli, Ilio; Marzo, Fabio; Lovergine, Nico (2013)
  Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires
  in Physica status solidi. Rapid research letters (Print); WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Prete, Paola; Miccoli, Ilio; Marzo, Fabio; Lovergine, Nico (literal)

Pagina inizio

• 874 (literal)

Pagina fine

• 877 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 7 (literal)

Rivista

• Physica status solidi. Rapid research letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Consiglio Nazionale delle Ricerche (CNR); University of Salento (literal)

Titolo

• Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires (literal)

Abstract

• The core photoluminescence emission of MOVPE-grown GaAs-Al0.33Ga0.67As core-shell nanowires is studied as function of the relevant geometrical parameter of these nanostructures, namely the shell-thickness to core-radius ratio h(s)/R-c. The energy of the dominant emission peak was compared with values of the GaAs heavy- and light-hole excitons redshifted by a uniaxial tensile strain, the latter calculated assuming perfect coherence at the core/shell interface and elastic energy equilibrium within the nanowires. Good agreement is obtained for h(s)/R-c < 1, the intrinsic strain-free excitonic emission being identified at 1.510 eV, and further ascribed to bound heavy-hole excitons. For h(s)/R-c > 1 increasingly larger redshifts (up to similar to 9 meV in excess of values calculated based on our elastic strain model) are observed, and tentatively ascribed to shell-dependent exciton localization effects. (literal)

Editore

• WILEY-V C H VERLAG GMBH (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• PAOLA PRETE (Persona)

Insieme di parole chiave

• Parole chiave di "Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• PAOLA PRETE (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica status solidi. Rapid research letters (Rivista)

Editore di

• WILEY-V C H VERLAG GMBH (Editore)

Insieme di parole chiave di

• Parole chiave di "Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires" (Insieme di parole chiave)