http://www.cnr.it/ontology/cnr/individuo/prodotto/ID304664
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista)
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- Label
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2014.03.021 (literal)
- Alternative label
Lamperti, Alessio; Molle, Alessandro; Cianci, Elena; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco (2014)
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition
in Thin solid films (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lamperti, Alessio; Molle, Alessandro; Cianci, Elena; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco (literal)
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- http://www.scopus.com/record/display.url?eid=2-s2.0-84908073592&origin=inward (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Laboratorio Nazionale MDM; Universita degli Studi di Milano - Bicocca (literal)
- Titolo
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (literal)
- Abstract
- For the fabrication of n-type metal-oxide-semiconductor field-effect transistor based on high mobility III-V
compound semiconductors as channel materials, a major requirement is the integration of high quality gate
oxides on top of the III-V substrates. A detailed knowledge of the interface between the oxide layer and the
substrate is mandatory to assess the relevance of interdiffusion and related defects, which are detrimental.
Here we grow high dielectric constant (k) Al:MO2 (M = Hf, Zr) gate materials on In0.53Ga0.47As substrates by
atomic layer deposition, after an Al2O3 pre-treatment based on trimethylaluminumis performed to properly passivate
the substrate surface. Time of flight secondary ion mass spectrometry depth profiles reveal not only the
film integrity and the chemical composition of the high-k oxide but also well elucidate the effect of the Al2O3
pre-treatment on Al:MO2/In0.53Ga0.47As interface. Even though the chemical profile is well defined in both
cases, a broader interface is detected for Al:ZrO2. X-ray photoemission spectroscopy evidenced the presence of
As3+ states in Al:ZrO2 only. Accordingly, preliminary capacitance-voltage measurements point out to a better
field effect modulation in the capacitor incorporating Al:HfO2. Based on the above considerations Al:HfO2 looks
as a preferred candidate with respect to Al:ZrO2 for the integration on top of In0.53Ga0.47As substrates. (literal)
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