Contact effects in Organic Thin Film Transistors (Comunicazione a convegno)

Type
Label
  • Contact effects in Organic Thin Film Transistors (Comunicazione a convegno) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • L. Mariucci, M. Rapisarda, A. Valletta, G. Fortunato, A. Daami, S. Jacob, M. Benwadih, R. Coppard (2012)
    Contact effects in Organic Thin Film Transistors
    in ICOE 2012 - International Conference on Organic Electronics, Tarragona (Spagna), 25-27 giugno 2012
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L. Mariucci, M. Rapisarda, A. Valletta, G. Fortunato, A. Daami, S. Jacob, M. Benwadih, R. Coppard (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR- IMM; CEA/Liten/DTNM/LCEI (literal)
Titolo
  • Contact effects in Organic Thin Film Transistors (literal)
Abstract
  • The electrical characteristics of organic thin film transistors (OTFTs) are frequently affected by contact effects [1, 2, 3], which can seriously influence the transistor performance. Indeed, the \"parasitic\" voltage drop at the contacts reduces the effective drain-source and gate-source bias voltages applied to the intrinsic channel of the transistor, reducing the device current. Contact resistance, Rc, appears to be strongly affected by the device architecture and much higher Rs-values are typically observed in coplanar structures (also known as bottom-contacts) than in staggered structures (top contacts). The presence of Schottky barriers, trap state density and field dependence of carrier mobility have been shown to influence the Rc. The importance of the contact resistance is more relevant in the case of large carrier mobility and/or small channel length devices, where its value may become comparable to, or even larger than, the channel resistance. In this work we analyse, in particular, the contact effects in electrical characteristics of fully printed p-channel staggered OTFTs with field effect mobility up to 1.5 cm2/Vs [3] and channel length down to 5 um. (literal)
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