Microscopic investigations of advanced thin films for photonics (Contributo in atti di convegno)

Type
Label
  • Microscopic investigations of advanced thin films for photonics (Contributo in atti di convegno) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/1742-6596/471/1/012004 (literal)
Alternative label
  • Boninelli, S.; Shakoor, A.; Welma, K.; Krauss, T. F.; O'Faolain, L.; Lo Savio, R.; Portalupi, S.; Gerace, D.; Galli, M.; Cardile, P.; Bellocchi, G.; Franzo, G.; Miritello, M.; Iacona, F.; Priolo, F. (2013)
    Microscopic investigations of advanced thin films for photonics
    in 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Boninelli, S.; Shakoor, A.; Welma, K.; Krauss, T. F.; O'Faolain, L.; Lo Savio, R.; Portalupi, S.; Gerace, D.; Galli, M.; Cardile, P.; Bellocchi, G.; Franzo, G.; Miritello, M.; Iacona, F.; Priolo, F. (literal)
Pagina inizio
  • 012004 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 471 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 471 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • MATIS IMM CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via Santa Sofia 64, 95121 Catania, Italy SUPA, School of Physics and Astronomy, University of St. Andrews, Fife KY16 9SS, St. Andrews, United Kingdom Dipartimento di Fisica, Università di Pavia, via Bassi 6, 27100 Pavia, Italy (literal)
Titolo
  • Microscopic investigations of advanced thin films for photonics (literal)
Abstract
  • We present the different approaches we recently followed to achieve intense room temperature photoluminescence (PL) from Si-based materials. On one side we obtained sub-bandgap PL from H-related defects induced by the H-2 plasma treatment of Si photonic crystal (PhC) nanocavities. We demonstrated that a strong and narrow PL emission can be obtained in the PhC nanocavities due to the formation of a damaged layer mainly consisting of nanometric platelets and bubbles. An overall 40000-fold enhancement of the PL signal, with respect to pure crystalline Si, has been achieved and moreover the signal can be tuned in a wide range by only changing the PhC parameters. On the other side, we focused our attention on the properties of SiO2 and SiOC host matrices doped with Eu ions. C addition produces a strong enhancement of the Eu PL with respect to pure SiO2 films. The chemical and structural characterization of these materials reveals an extensive Eu clustering in SiO2-based films, while C addition induces a significant reduction of this phenomenon, enhancing the fraction of optically active Eu ions. These results can be applied for the realization of efficient Si-based light sources. (literal)
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