Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2008.03.037 (literal)

Alternative label

• De Bastiani R, Piro AM, Crupi I, Grimaldi MG, Rimini E (2008)
  Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• De Bastiani R, Piro AM, Crupi I, Grimaldi MG, Rimini E (literal)

Pagina inizio

• 2511 (literal)

Pagina fine

• 2514 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 266 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; INFM, MATIS CNR, I-95123 Catania, Italy; CNR IMM, I-95121 Catania, Italy (literal)

Titolo

• Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films (literal)

Abstract

• The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystaliline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation. (literal)

Prodotto di

• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Autore CNR

• MARIA GRAZIA GRIMALDI (Persona)
• RICCARDO DE BASTIANI (Persona)
• ISODIANA CRUPI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ISODIANA CRUPI (Unità di personale interno)
• MARIA GRAZIA GRIMALDI (Persona)
• RICCARDO DE BASTIANI (Persona)

Prodotto

• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Insieme di parole chiave di

• Keywords of "Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films" (Insieme di parole chiave)