Activation and carrier mobility in high fluence B implanted germanium (Articolo in rivista)

Type
Label
  • Activation and carrier mobility in high fluence B implanted germanium (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2949088 (literal)
Alternative label
  • Mirabella, S; Impellizzeri, G; Piro, AM; Bruno, E; Grimaldi, MG (2008)
    Activation and carrier mobility in high fluence B implanted germanium
    in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirabella, S; Impellizzeri, G; Piro, AM; Bruno, E; Grimaldi, MG (literal)
Pagina inizio
  • 251909 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 92 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, INFM, CNR, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Activation and carrier mobility in high fluence B implanted germanium (literal)
Abstract
  • High doping regimes of B implanted Ge have been accurately characterized combining Hall effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at 35 keV (spanning the 0.25-25x10(20) B/cm(3) concentration range) and recrystallized by solid phase epitaxy at 360 degrees C. The Hall scattering factor and the maximum concentration of active B resulted r(H)=1.21 and similar to 5.7x10(20) B/cm(3), respectively. The room-temperature carrier mobility was accurately measured, decreasing from similar to 300 to 50 cm(2)/V s in the investigated dopant density, and a fitting empirical law is given. These results allow reliable evaluation for Ge application in future microelectronic devices. (c) 2008 American Institute of Physics. (literal)
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