Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4896325 (literal)

Alternative label

• Battaglia J.-L.; Kusiak A.; Saci A.; Fallica R.; Lamperti A.; Wiemer C. (2014)
  Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Battaglia J.-L.; Kusiak A.; Saci A.; Fallica R.; Lamperti A.; Wiemer C. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84907452338&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 105 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 12 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratory I2M, UMR 5295, University of Bordeaux, 351 cours de la Libération, Talence Cedex, 33405, France; Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, Agrate Brianza, 20864, Italy (literal)

Titolo

• Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (literal)

Abstract

• We study the dependence of the thermal resistance of TiN/Ge2Sb2Te5 stacks on Si in the presence or not of a thin Ti interfacial layer. While for TiN/Ge2Sb2Te5 almost ideal thermal properties of the interfaces are found, a different behaviour is measured for TiN/Ti/Ge2Sb2Te5. After exposure to temperatures up to 440 ?C, the thermal resistance results to be lower than expected despite both the formation of the TiTe2 phase, the depletion of Te inside Ge2Sb2Te5, and the non complete development of the hexagonal structure. Those observations have been also validated on the SiO2/Ge2Sb2Te5 stack with and without Ti interfacial layer. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)