Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.apsusc.2013.09.126 (literal)

Alternative label

• Deretzis I.; La Magna A. (2014)
  Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations
  in Applied surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Deretzis I.; La Magna A. (literal)

Pagina inizio

• 69 (literal)

Pagina fine

• 73 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84891835799&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 291 (literal)

Rivista

• Applied surface science (Rivista)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania, Italy (literal)

Titolo

• Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations (literal)

Abstract

• The graphitization of the SiC(0 0 0 1?) plane, commonly referred to as the C-face of SiC, takes place through the sublimation and reorganization of surface atoms upon high-temperature annealing. Often, such reorganization gives rise to ordered atomic reconstructions over the ideally flat (0 0 0 1?) plane. In this article, we use the density functional theory to model graphene/SiC(0 0 0 1?) interfaces with an (1 × 1), (2 × 2) and (3 × 3) SiC periodicity. Our results indicate that the interface geometry can be crucial for both the stability and the electronic characteristics of the first graphitic layer, revealing a complex scenario of binding, doping and electronic correlations. We argue that the presence of more than one interface geometry at different areas of the same sample could be a reason for structural inhomogeneity and n- to p-type transitions. © 2013 Elsevier B.V. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• IOANNIS DERETZIS (Persona)
• ANTONINO LA MAGNA (Persona)

Insieme di parole chiave

• Keywords of "Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• IOANNIS DERETZIS (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)

Insieme di parole chiave di

• Keywords of "Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations" (Insieme di parole chiave)