Electron injection barrier and energy-level alignment at the Au/PDI8-CN2 interface via current-voltage measurements and ballistic emission microscopy (Articolo in rivista)

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  • Electron injection barrier and energy-level alignment at the Au/PDI8-CN2 interface via current-voltage measurements and ballistic emission microscopy (Articolo in rivista) (literal)
Anno
  • 2015-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.orgel.2015.01.007 (literal)
Alternative label
  • Buzio R.; Gerbi A.; Marre D.; Barra M.; Cassinese A. (2015)
    Electron injection barrier and energy-level alignment at the Au/PDI8-CN2 interface via current-voltage measurements and ballistic emission microscopy
    in Organic electronics (Print); Elsevier BV, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Buzio R.; Gerbi A.; Marre D.; Barra M.; Cassinese A. (literal)
Pagina inizio
  • 44 (literal)
Pagina fine
  • 52 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84921326223&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 18 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-SPIN Institute for Superconductors, Innovative Materials and Devices, C.so Perrone 24, Genova, 16152, Italy; Physics Department, University of Genova, Via Dodecaneso 33, Genova, 16146, Italy; CNR-SPIN and Physics Department, University of Naples Federico II, Piazzale Tecchio, Napoli, 80125, Italy (literal)
Titolo
  • Electron injection barrier and energy-level alignment at the Au/PDI8-CN2 interface via current-voltage measurements and ballistic emission microscopy (literal)
Abstract
  • We probe electron transport across the Au/organic interface based on oriented thin films of the high-performance n-type perylene diimide semiconductor PDI8-CN2. To this purpose, we prepared organic-on-inorganic Schottky diodes, with Au directly evaporated onto PDI8-CN2 grown on n-Si. Temperature-dependent current-voltage characteristics and complementary ballistic electron emission microscopy studies reveal that rectification at the Au/PDI8-CN2 interface is controlled by a spatially inhomogeneous injection barrier, that varies on a length scale of tens of nanometers according to a Gaussian distribution with mean value ~0.94 eV and standard deviation ~100 meV. The former gradually shifts to ~1.04 eV on increasing PDI8-CN2 thickness from 5 nm to 50 nm. Experimental evidences and general arguments further allow to establish the energetics at the Au/PDI8-CN2 interface. Our work indicates injection-limited current flow in PDI8-CN2-based devices with evaporated Au electrodes. Furthermore, it suggests chemical reactivity of PDI8-CN2 with both Au and Si, driven by the lateral isocyano groups. (literal)
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