Ab initio study of Ge intercalation in epitaxial graphene on SiC(0001) (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Ab initio study of Ge intercalation in epitaxial graphene on SiC(0001) (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1143/APEX.4.125101 (literal)

Alternative label

• Deretzis I.; La Magna A. (2011)
  Ab initio study of Ge intercalation in epitaxial graphene on SiC(0001)
  in Applied physics express (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Deretzis I.; La Magna A. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-83455228382&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 4 (literal)

Rivista

• Applied physics express (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 12 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi, IMM, CNR, Z.I. VIII Strada 5, 95121 Catania, Italy (literal)

Titolo

• Ab initio study of Ge intercalation in epitaxial graphene on SiC(0001) (literal)

Abstract

• We study within a van der Waals density functional theory framework the structural and electronic properties of Ge-intercalated epitaxial graphene on SiC(0001). We argue that the insertion of Ge adatoms at the graphene/SiC interface results in an almost complete detachment of the graphitic layer from the substrate. A stable electron-doped phase is obtained as a result of the pinning of the Fermi level by sp 3-type Ge danglingbond states. Stability is preserved when germanium atoms substitute Si/C atoms of the SiC substrate, while it is compromised when Ge is additionally chemisorbed on the graphene surface. Results are in good agreement with recent experiments. © 2011 The Japan Society of Applied Physics. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• IOANNIS DERETZIS (Unità di personale interno)
• ANTONINO LA MAGNA (Unità di personale interno)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Unità di personale interno)
• IOANNIS DERETZIS (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics express (Rivista)