Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001) (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001) (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.84.235426 (literal)

Alternative label

• Deretzis I.; La Magna A. (2011)
  Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Deretzis I.; La Magna A. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84855392378&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 84 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 23 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII strada 5, I-95121 Catania, Italy (literal)

Titolo

• Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001) (literal)

Abstract

• We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the (6?3×6?3)R30 surface reconstruction of the graphene/SiC heterosystem, we find that both H and Li can restore the ideal structural characteristics of the two nonequivalent junction parts (i.e., graphene and the SiC substrate) when inserted at the interface. However, the chemical and electrostatic interactions remain different for the two cases. Hence, H-intercalated epitaxial graphene is subject to a sublattice symmetry-breaking electronic interference that perturbs the Dirac point, whereas Li intercalation gives rise to a highly n-doped system due to a nonuniform delocalization of Li charges. Results bring to discussion the role of substrate engineering in epitaxial graphene on SiC. © 2011 American Physical Society. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• IOANNIS DERETZIS (Unità di personale interno)
• ANTONINO LA MAGNA (Unità di personale interno)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Unità di personale interno)
• IOANNIS DERETZIS (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)