http://www.cnr.it/ontology/cnr/individuo/prodotto/ID300921

Joule heating-assisted growth of Cu(In,Ga)Se2 solar cells (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Joule heating-assisted growth of Cu(In,Ga)Se2 solar cells (Articolo in rivista) (literal)

Anno

2015-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1063/1.4906979 (literal)

Alternative label

S. Rampino, F. Annoni, M. Bronzoni, M. Calicchio, E. Gombia, M. Mazzer, F. Pattini, E. Gilioli (2015)
Joule heating-assisted growth of Cu(In,Ga)Se2 solar cells
in Journal of renewable and sustainable energy (Online); AIP Publishing LLC, Melville, NY 11747 (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

S. Rampino, F. Annoni, M. Bronzoni, M. Calicchio, E. Gombia, M. Mazzer, F. Pattini, E. Gilioli (literal)

Pagina inizio

013112-1 (literal)

Pagina fine

013112-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://scitation.aip.org/content/aip/journal/jrse/7/1/10.1063/1.4906979 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

7 (literal)

Rivista

Journal of renewable and sustainable energy (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

1 (literal)

Note

Google Scholar (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

IMEM - CNR Institute (literal)

Titolo

Joule heating-assisted growth of Cu(In,Ga)Se2 solar cells (literal)

Abstract

We report on the development of an unconventional method for heating a Mo-coated substrate during the deposition of a Cu(In,Ga)Se2 (CIGS) layer by the pulsed electron deposition technique, to be used as absorber in thin film solar cells. This method is based on the application of a DC electrical power directly through the Mo back contact of the cell, converting electrical energy into heat by Joule effect. Since the current flows only on the superficial metal-coated region of the substrate, a localized heating of the surface can be achieved, thus limiting the heat losses. Due to the very efficient heat transfer to the thin Mo layer, a very little electrical power density (few W/cm2) is enough to achieve the required deposition temperature on the Mo surface, much lower compared to the traditional resistor- or lamp-based external heaters. The morphological and electrical properties of Joule-heated samples have been compared to those of CIGS films heated by a conventional external heater. As far as the structure concerns, a remarkable difference is revealed by Scanning Electron Microscopy analysis, indicating a significant enlargement of the CIGS grains size on Joule-heated samples. On the contrary, Capacitance-Voltage and Current-Voltage measurements evidence similar electrical features: both types of heated samples have a net free carrier concentration ?5 × 1015 cm-3, resulting in a similar photovoltaic conversion efficiency (?15%). The main recombination path, deduced from the dependence of VOC on the temperature, results to be the Shockley-Read-Hall mechanism in both types of the absorber layer. These results indicate that the Joule effect could be adopted as a feasible, low cost alternative heating method for growing high quality CIGS layers. (literal)

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