http://www.cnr.it/ontology/cnr/individuo/prodotto/ID300789
Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures (Articolo in rivista)
- Type
- Label
- Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1038/ncomms6824 (literal)
- Alternative label
Gamucci, A.; Spirito, D.; Carrega, M.; Karmakar, B.; Lombardo, A.; Bruna, M.; Pfeiffer, L. N.; West, K. W.; Ferrari, A. C.; Polini, M.; Pellegrini, V. (2014)
Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures
in Nature communications
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Gamucci, A.; Spirito, D.; Carrega, M.; Karmakar, B.; Lombardo, A.; Bruna, M.; Pfeiffer, L. N.; West, K. W.; Ferrari, A. C.; Polini, M.; Pellegrini, V. (literal)
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- ISI Web of Science (WOS) (literal)
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- CNR; Scuola Normale Super Pisa; Univ Cambridge; Princeton Univ; Ist Italiano Tecnol (literal)
- Titolo
- Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures (literal)
- Abstract
- Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures <5-10 K. The low-temperature data follow a logarithmic law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits. (literal)
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