Current transport in graphene/AlGaN/GaN heterostructures (Contributo in atti di convegno)

Type
Label
  • Current transport in graphene/AlGaN/GaN heterostructures (Contributo in atti di convegno) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/NMDC.2014.6997411 (literal)
Alternative label
  • Fisichella G.; Greco G.; Ravesi S.; Roccaforte F.; Giannazzo F. (2014)
    Current transport in graphene/AlGaN/GaN heterostructures
    in 9th IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Aci Castello (Italy), 12-15 October , 2014
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fisichella G.; Greco G.; Ravesi S.; Roccaforte F.; Giannazzo F. (literal)
Pagina inizio
  • 19 (literal)
Pagina fine
  • 22 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84921269664&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proc. of 9th IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC) (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Consiglio Nazionale Delle Ricerche, Institute for Microelectronics and Microsystems, CNR-IMM, Catania, Italy; Department of Electronic Engineering, University of Catania, Italy; STMicroelectronics, Catania, Italy (literal)
Titolo
  • Current transport in graphene/AlGaN/GaN heterostructures (literal)
Abstract
  • In this paper, we show that Graphene (Gr) can provide highly laterally homogeneous Schottky or ohmic contacts to AlxGa1-xN/GaN heterostructures even without any thermal treatment. Current transport from Gr to the AlGaN/GaN Two Dimensional Electron Gas (2DEG) was investigated by local I-V measurements using Conductive Atomic Force Microscopy (CAFM). The AlGaN microstructure was found to play a key role on the transport properties at Gr/AlGaN interface. Gr contacts onto a uniform and defect-free AlGaN barrier layer exhibits a rectifying behaviour with a lower and much more uniform Schottky barrier with respect to common metals. Interestingly, a highly uniform ohmic contact is obtained with Gr on AlGaN layers with a properly chosen microstructure, i.e in the presence of a large density of V-shaped defects which locally reduce the AlGaN thickness. Noteworthy, the ohmic behaviour on AlGaN/GaN heterostructures with an as-deposited contact is a unique property of Gr, not observed with conventional metal electrodes. It can be the object of important applications in GaN technology. (literal)
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