http://www.cnr.it/ontology/cnr/individuo/prodotto/ID300158
Micro-Raman characterization of graphene grown on SiC(000-1) (Contributo in atti di convegno)
- Type
- Label
- Micro-Raman characterization of graphene grown on SiC(000-1) (Contributo in atti di convegno) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1109/NMDC.2014.6997410 (literal)
- Alternative label
Piazza A.; Agnello S.; Deretzis I.; La Magna A.; Scuderi M.; Nicotra G.; Spinella C.; Fisichella G.; Roccaforte F.; Cannas M.; Gelardi F.M.; Yakimova R.; Giannazzo F. (2014)
Micro-Raman characterization of graphene grown on SiC(000-1)
in 9th IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Aci Castello (Italy), 12-15 October , 2014
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Piazza A.; Agnello S.; Deretzis I.; La Magna A.; Scuderi M.; Nicotra G.; Spinella C.; Fisichella G.; Roccaforte F.; Cannas M.; Gelardi F.M.; Yakimova R.; Giannazzo F. (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.scopus.com/inward/record.url?eid=2-s2.0-84921292788&partnerID=q2rCbXpz (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- Proc. of 9th IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC) (literal)
- Note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Consiglio Nazionale Delle Ricerche, Istituto di Microelettronica e Microsistemi, CNR-IMM, Catania, Italy; Department of Physics and Chemistry, University of Palermo, Italy; IFM, Linkoping University, Linkoping, Sweden (literal)
- Titolo
- Micro-Raman characterization of graphene grown on SiC(000-1) (literal)
- Abstract
- Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), ?Raman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. ?Raman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain. (literal)
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