Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/05003.0163ecst (literal)

Alternative label

• M. Leszczynski 1, P. Prystawko 1, J. Plesiewicz 1, L. Dmowski 1, E. Litwin-Staszewska 1, S. Grzanka 1, E. Grzanka 1, F. Roccaforte 2 (2012)
  Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy
  in ECS transactions
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Leszczynski 1, P. Prystawko 1, J. Plesiewicz 1, L. Dmowski 1, E. Litwin-Staszewska 1, S. Grzanka 1, E. Grzanka 1, F. Roccaforte 2 (literal)

Pagina inizio

• 163 (literal)

Pagina fine

• 171 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 50 (literal)

Rivista

• ECS transactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Institute of High Pressure Physics, Warsaw (Poland) 2. CNR-IMM, Catania (Italy) (literal)

Titolo

• Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy (literal)

Abstract

• The first part of the paper shows the advantages and disadvantages of using GaN and SiC substrates with an off-cut up to 2 degrees. The following experimental observations were made: i) higher efficiency in p-doping with magnesium, ii) higher critical conditions for AlGaN cracking, iii) trigonal deformation of AlGaN and InGaN unit cells. A successful growth of AlGaN/GaN HEMT epi structure on 2 degree-off SiC substrates will be shown, what paves the way to a monolithic integration of GaN-based and SiC based devices on a common SiC substrate. In the second part of the paper, we show the experimental results on AlGaN/GaN degradation upon prolonged annealing at 600 degrees C. In the case of epi structures on Si and sapphire, the parasitic parallel conductivity appeared, whereas in the case of SiC substrates, annealing introduced no distinct changes. (literal)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ECS transactions (Rivista)