Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.apsusc.2013.10.041 (literal)

Alternative label

• F. Giannazzo 1, I. Deretzis 1, G. Nicotra 1, G. Fisichella 1,2, C. Spinella 1, F. Roccaforte 1, A. La Magna 1 (2014)
  Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy
  in Applied surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• F. Giannazzo 1, I. Deretzis 1, G. Nicotra 1, G. Fisichella 1,2, C. Spinella 1, F. Roccaforte 1, A. La Magna 1 (literal)

Pagina inizio

• 53 (literal)

Pagina fine

• 57 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 291 (literal)

Rivista

• Applied surface science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR-IMM, Catania (Italy) 2. University of Catania, Italy (literal)

Titolo

• Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy (literal)

Abstract

• In this paper, the electronic transport in few layer graphene epitaxially grown on the Si face of 8 degrees off-axis 4H-SiC has been investigated using conductive atomic force microscopy (CAFM). The comparison between the two dimensional morphology and current maps in epitaxial graphene (EG) residing over the stepped SiC surface revealed a local resistance increase of EG over the (11 - 2n) facets with respect to the(0001) basal plane. This is consistent with a significant reduction of the carrier concentration, possibly approaching to the neutrality, in EG residing on facets with respect to the high n-type doping (similar to 10(13) cm(-2)) commonly found in EG on the basal plane. The observed difference can be ascribed to a different interfacestructure between EG and SiC on the two faces. The results of these nanoscale measurements allow us to explain the typically observed macroscopic anisotropy in EG conductivity with respect to the substrate steps orientation. (C) 2013 Elsevier B. V. All rights reserved. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• ROSARIO CORRADO SPINELLA (Persona)
• FABRIZIO ROCCAFORTE (Persona)
• GIUSEPPE NICOTRA (Persona)
• ANTONINO LA MAGNA (Persona)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Keywords of "Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• ANTONINO LA MAGNA (Persona)
• FILIPPO GIANNAZZO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• GIUSEPPE NICOTRA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)

Insieme di parole chiave di

• Keywords of "Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy" (Insieme di parole chiave)