Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts (Articolo in rivista)

Type
Label
  • Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.778-780.1142 (literal)
Alternative label
  • F. Giannazzo 1, S. Hertel 2, A. Albert 2, A. La Magna 2, F. Roccaforte 1, M. Krieger 2, H.B. Weber 2 (2014)
    Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Giannazzo 1, S. Hertel 2, A. Albert 2, A. La Magna 2, F. Roccaforte 1, M. Krieger 2, H.B. Weber 2 (literal)
Pagina inizio
  • 1142 (literal)
Pagina fine
  • 1145 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 778-780 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR-IMM, Catania (Italy) 2. University of Erlangen-Nurnberg (Germany) (literal)
Titolo
  • Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts (literal)
Abstract
  • Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] approximate to 10(15) cm(-3)) SiC, and a specific contact resistance as low as rho(c) = 5.9x10(-6) Omega cm(2) can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS. (literal)
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