Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/23/6/065603 (literal)

Alternative label

• MacLeod, Jennifer M.; Cojocaru, Cristian Victor; Ratto, Fulvio; Harnagea, Catalin; Bernardi, Andrea L.; Alonso, Maria Isabel; Rosei, Federico (2012)
  Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• MacLeod, Jennifer M.; Cojocaru, Cristian Victor; Ratto, Fulvio; Harnagea, Catalin; Bernardi, Andrea L.; Alonso, Maria Isabel; Rosei, Federico (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/record/display.url?eid=2-s2.0-84855929304&origin=inward (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 23 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 6 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Le reseau de l'Universite du Quebec; Istituto Di Fisica Applicata Nello Carrara; Universidad Autonoma de Barcelona; McGill University; Conseil national de recherches Canada (literal)

Titolo

• Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition (literal)

Abstract

• The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified StranskiKrastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and -Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate. © 2012 IOP Publishing Ltd. (literal)

Prodotto di

• Institute of applied physics \"Nello Carrara\" (IFAC) (Istituto)

Autore CNR

• FULVIO RATTO (Persona)

Incoming links:

Prodotto

• Institute of applied physics \"Nello Carrara\" (IFAC) (Istituto)

Autore CNR di

• FULVIO RATTO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)