http://www.cnr.it/ontology/cnr/individuo/prodotto/ID298732
Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition (Articolo in rivista)
- Type
- Label
- Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition (Articolo in rivista) (literal)
- Anno
- 2015-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2014.11.092 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Chen S.; Carraro G.; Barreca D.; Binions R. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
- Available online 10 December 2014
In Press, Corrected Proof -- Note to users (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0040609014012632 (literal)
- Rivista
- Note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1,4 : School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UK /
2 : Department of Chemistry and INSTM, Padova University, Padova 35131, Italy /
3 : CNR-IENI and INSTM, Department of Chemistry, Padova University, Padova 35131, Italy (literal)
- Titolo
- Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition (literal)
- Abstract
- Transparent conductive Ga-doped ZnO thin films were deposited onto glass substrates by a low-cost aerosol assisted chemical vapour deposition technique and the effect of gallium content on the ZnO film growth behaviour and opto-electronic properties was systematically investigated. It is found that, upon increasing Ga addition, the ZnO film crystallinity exhibits a continuous reduction in quality associated with the preferential orientation transformed from (002) to (102). The (002) oriented samples had a microstructure of parallel columnar grains while the (102) oriented coating was thickened by overlapping particles. The ZnO:Ga coatings exhibit high carrier concentration (up to 4.1 × 1020 cm- 3) but low carrier mobility (up to 0.8 cm2 V- 1 s- 1), resulting in a minimum resistivity value of 2.3 × 10- 2 ? cm. The inferior carrier mobility performance could result from a profound ionized and neutral impurity scattering effect. Good visible transmittance (? 70-80%) is observed in these ZnO:Ga films and samples with higher carrier density present better infrared reflection performance (up to 37.2% at 2500 nm). (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di