Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition (Articolo in rivista)

Type
Label
  • Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition (Articolo in rivista) (literal)
Anno
  • 2015-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2014.11.092 (literal)
Alternative label
  • Chen S.; Carraro G.; Barreca D.; Binions R. (2015)
    Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Chen S.; Carraro G.; Barreca D.; Binions R. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Available online 10 December 2014 In Press, Corrected Proof -- Note to users (literal)
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  • http://www.sciencedirect.com/science/article/pii/S0040609014012632 (literal)
Rivista
Note
  • Scopu (literal)
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  • 1,4 : School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UK / 2 : Department of Chemistry and INSTM, Padova University, Padova 35131, Italy / 3 : CNR-IENI and INSTM, Department of Chemistry, Padova University, Padova 35131, Italy (literal)
Titolo
  • Growth and electro-optical properties of Ga-doped ZnO films prepared by aerosol assisted chemical vapour deposition (literal)
Abstract
  • Transparent conductive Ga-doped ZnO thin films were deposited onto glass substrates by a low-cost aerosol assisted chemical vapour deposition technique and the effect of gallium content on the ZnO film growth behaviour and opto-electronic properties was systematically investigated. It is found that, upon increasing Ga addition, the ZnO film crystallinity exhibits a continuous reduction in quality associated with the preferential orientation transformed from (002) to (102). The (002) oriented samples had a microstructure of parallel columnar grains while the (102) oriented coating was thickened by overlapping particles. The ZnO:Ga coatings exhibit high carrier concentration (up to 4.1 × 1020 cm- 3) but low carrier mobility (up to 0.8 cm2 V- 1 s- 1), resulting in a minimum resistivity value of 2.3 × 10- 2 ? cm. The inferior carrier mobility performance could result from a profound ionized and neutral impurity scattering effect. Good visible transmittance (? 70-80%) is observed in these ZnO:Ga films and samples with higher carrier density present better infrared reflection performance (up to 37.2% at 2500 nm). (literal)
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