Anomalous capacitance enhancement triggered by light (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Anomalous capacitance enhancement triggered by light (Articolo in rivista) (literal)

Anno

• 2015-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/JSTQE.2014.2376701 (literal)

Alternative label

• Dianat P, Persano A, Quaranta F, Cola A, Nabet B (2015)
  Anomalous capacitance enhancement triggered by light
  in IEEE journal of selected topics in quantum electronics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Dianat P, Persano A, Quaranta F, Cola A, Nabet B (literal)

Pagina inizio

• 3800605-1 (literal)

Pagina fine

• 3800605-5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6975023 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 21 (literal)

Rivista

• IEEE journal of selected topics in quantum electronics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Electrical and Computer Engineering, Drexel University, Philadelphia, PA 19104 USA; Institute for Microelectronics and Microsystems, Unit of Lecce, National Council of Research, Lecce 73100, Italy (literal)

Titolo

• Anomalous capacitance enhancement triggered by light (literal)

Abstract

• Capacitance of capacitors in which one or both plates are made of a two-dimensional charge system (2DCS) can be increased beyond their geometric structural value. This anomalous capacitance enhancement (CE) is a consequence of manipulation of quantum mechanical exchange and correlation energies in the ground state energy of the 2DCS. Macroscopically, it occurs at critical charge densities corresponding to transition from an interacting \"metallic\" to a noninteracting \"insulator\" mode in the 2-D system. Here, we apply this concept to a metal-semiconductor- metal capacitor with an embedded two-dimensional hole system (2DHS) underneath the plates for realization of a capacitancebased photodetector. Under sufficient illumination, and at critical voltages the device shows a giant CE of 200% and a peak-tovalley ratio of over 4 at probe frequencies larger than 10 kHz. Remarkably, the light-to-dark capacitance ratio due to CE at this critical voltage is well over 40. Transition of the 2DHS from insulator to metallic, enforced by charge density manipulation due to light-generated carriers, accounts for this behavior, which may be used in optical sensing, photo capacitors, and photo transistors. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)

Autore CNR

• FABIO QUARANTA (Unità di personale interno)
• ADRIANO COLA (Unità di personale interno)
• ANNA PERSANO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Anomalous capacitance enhancement triggered by light" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• FABIO QUARANTA (Unità di personale interno)
• ANNA PERSANO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• IEEE journal of selected topics in quantum electronics (Rivista)

Insieme di parole chiave di

• Keywords of "Anomalous capacitance enhancement triggered by light" (Insieme di parole chiave)