Multicomponent Ta2O5-based thin films prepared by Chemical Solution Deposition: structural, dielectric and optical characterization (Comunicazione a convegno)

Type
Label
  • Multicomponent Ta2O5-based thin films prepared by Chemical Solution Deposition: structural, dielectric and optical characterization (Comunicazione a convegno) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. Canu, B. Malic, R.C. Frunza, B. Kuznik, M. Kosec (2011)
    Multicomponent Ta2O5-based thin films prepared by Chemical Solution Deposition: structural, dielectric and optical characterization
    in E-MRS Fall Meeting, Warsaw, Poland, 2011
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Canu, B. Malic, R.C. Frunza, B. Kuznik, M. Kosec (literal)
Note
  • Poster (literal)
  • Comunicazione (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia) (literal)
Titolo
  • Multicomponent Ta2O5-based thin films prepared by Chemical Solution Deposition: structural, dielectric and optical characterization (literal)
Abstract
  • Transparent electronics has gained considerable interest in the last decades. Its aim is the realization of fully transparent devices. This requires the deposition of thin films with suitable properties onto substrates requiring low temperature processing, as glass or even plastic, at low cost. Among dielectric materials, tantalum oxide is considered one of the most promising candidates, due to its high refractive index, high dielectric constant and good thermal and chemical stability. In this work, chemical solution deposition was used for the deposition of Ta2O5-based thin films, exploring several Al and/or Si containing compositions. Organics-free tantalum oxide-based films were prepared by spin coating the precursor solution onto glass and silicon dioxide substrates, followed by appropriate thermal treatment. XRD patterns show that all samples are amorphous. Analysis of their surface by AFM shows very flat surfaces, with RMS < 0.3 nm for films containing pure Ta or mixed compositions with small amounts of Al, Si. No significant changes in the microstructure were observed for increased amount of added Si. Further addition of Al leads to granular morphology, and the increase of roughness of one order of magnitude. The dielectric permittivity values of the amorphous films decrease for binary and ternary Ta-Al-Si-O compositions, compared to Ta2O5. Concerning the optical properties, addition of both Al and Si leads to an improvement of transparency. (literal)
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