Microwave Annealing of Ion Implanted 4H-SiC (Contributo in atti di convegno)

Type
Label
  • Microwave Annealing of Ion Implanted 4H-SiC (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Rao, Mulpuri V.; Nath, A.; Qadri, S. B.; Tian, Y-L.; Nipoti, R. (2010)
    Microwave Annealing of Ion Implanted 4H-SiC
    in 18th International Conference on Ion Implantation Technology, Kyoto Univ, Kyoto, JAPAN, JUN 06-11, 2010
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rao, Mulpuri V.; Nath, A.; Qadri, S. B.; Tian, Y-L.; Nipoti, R. (literal)
Pagina inizio
  • 241 (literal)
Pagina fine
  • 244 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • ION IMPLANTATION TECHNOLOGY 2010 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 1321 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 1321 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • George Mason University, Consiglio Nazionale delle Ricerche, LT Technologies (literal)
Titolo
  • Microwave Annealing of Ion Implanted 4H-SiC (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-7354-0876-0 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Matsuo, J; Kase, M; Aoki, T; Seki, T (literal)
Abstract
  • Ultra-fast high-temperature microwave annealing at temperatures as high as 2050 degrees C for 30 s has been performed on phosphorus ion-implanted 4H-SiC for phosphorus doping concentrations in the range 5 x 10(19) cm-(3) -8 x 10(20) cm(-3). For comparison, inductive heating furnace anneals were performed at 1800 degrees C -1950 degrees C for 5 min. Electrical resistivity of the P(+)-implanted samples decreased with increasing annealing temperature reaching a minimum value of 6.8 x 10(-4) Omega cm for 2050 degrees C/30 s microwave annealing and a slightly higher value for 1950 degrees C/5 min inductive heating furnace annealing. X-ray rocking curve measurements showed that the microwave annealing not only removed the lattice damage introduced by the ion-implantation process, but also the defects present in the original virgin sample as well. (literal)
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