Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors (Contributo in atti di convegno)

Type
Label
  • Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.645-648.709 (literal)
Alternative label
  • Rao, Mulpuri V.; Tian, Y-L.; Qadri, S. B.; Freitas, J. A., Jr.; Nipoti, R. (2010)
    Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
    in 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, GERMANY, OCT 11-16, 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rao, Mulpuri V.; Tian, Y-L.; Qadri, S. B.; Freitas, J. A., Jr.; Nipoti, R. (literal)
Pagina inizio
  • 709 (literal)
Pagina fine
  • 712 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 645-648 (literal)
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  • 645-648 (literal)
Rivista
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • George Mason University, Consiglio Nazionale delle Ricerche, LT Technologies (literal)
Titolo
  • Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-87849-279-4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T (literal)
Abstract
  • In this work, the surface, lattice and electrical properties of implanted 4H-SiC, GaN and ZnO, annealed by a novel ultra-fast microwave heating method, are compared to that of conventional annealing methods. In this new method, amplified and variable frequency microwaves from a signal generator are directly coupled to the semiconductor sample through a microwave head. Since, the microwaves are only absorbed by the sample, without heating of the ambient, ultra-high heating (> 2000 degrees C/s) and cooling rates and very high (2100 degrees C) annealing temperatures can be reached. For Al and P species implants into 4H-SiC, record low resistivity values were achieved with a lattice quality better than that of the virgin crystal. This annealing method improved the lattice quality of un-implanted region below the surface implanted region as well. Improved material characteristics were also obtained for GaN and ZnO. (literal)
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