http://www.cnr.it/ontology/cnr/individuo/prodotto/ID297595
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states (Contributo in atti di convegno)
- Type
- Label
- Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states (Contributo in atti di convegno) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.4028/www.scientific.net/MSF.679-680.346 (literal)
- Alternative label
Pintilie, I.; Moscatell, F.; Nipoti, R.; Poggi, A.; Solmi, S.; Lovlie, L. S.; Svensson, B. G. (2011)
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states
in 8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Pintilie, I.; Moscatell, F.; Nipoti, R.; Poggi, A.; Solmi, S.; Lovlie, L. S.; Svensson, B. G. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.scientific.net/MSF.679-680.346 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- SILICON CARBIDE AND RELATED MATERIALS 2010 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- National Institute of Materials Physics - Romania, Università di Oslo, Consiglio Nazionale delle Ricerche (literal)
- Titolo
- Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-3-03785-079-4 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- Monakhov, EV; Hornos, T; Svensson, BG (literal)
- Abstract
- Comparative studies of gate oxides on a N+ pre-implanted area (N-interface similar to 1x10(19)cm(-3)) and on a virgin Si face 4H-SiC material (N-interface similar to 1x10(16)cm(-3)) have been undertaken by means of Capacitance-Voltage (C-V) characteristics, performed at different temperatures and frequencies, and Thermal Dielectric Relaxation Current technique. In the non implanted samples, the stretch out of the C-V curves get larger as the temperature is lowered to 150K, while for lower temperatures the C-V characteristics become steeper and some discontinuities occur. These discontinuities are specific for the non-implanted sample and are associated with charging of the fast near interface states (NIToxfast) via a tunneling from the shallow interface states (D-it). The tunneling from the shallow D-it to NIToxfast supress the a.c. response of D-it, which is recovered only after most of the NIToxfast are charged with electrons. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di