http://www.cnr.it/ontology/cnr/individuo/prodotto/ID297546
Redox processes at a nanostructured interface under strong electric fields (Articolo in rivista)
- Type
- Label
- Redox processes at a nanostructured interface under strong electric fields (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1039/c4nr02882a (literal)
- Alternative label
Steurer, Wolfram; Surnev, Svetlozar; Netzer, Falko P.; Sementa, Luca; Negreiros, Fabio R.; Barcaro, Giovanni; Durante, Nicola; Fortunelli, Alessandro (2014)
Redox processes at a nanostructured interface under strong electric fields
in Nanoscale (Print); RSC Publishing, Cambridge (Regno Unito)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Steurer, Wolfram; Surnev, Svetlozar; Netzer, Falko P.; Sementa, Luca; Negreiros, Fabio R.; Barcaro, Giovanni; Durante, Nicola; Fortunelli, Alessandro (literal)
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- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- University of Graz; Consiglio Nazionale delle Ricerche (CNR); Consiglio Nazionale delle Ricerche (CNR) (literal)
- Titolo
- Redox processes at a nanostructured interface under strong electric fields (literal)
- Abstract
- Manipulation of chemistry and film growth via external electric fields is a longstanding goal in surface science. Numerous systems have been predicted to show such effects but experimental evidence is sparse. Here we demonstrate in a custom-designed UHV apparatus that the application of spatially extended, homogeneous, very high (>1 V nm(-1)) DC-fields not only changes the system energetics but triggers dynamic processes which become important much before static contributions appreciably modify the potential energy landscape. We take a well characterized ultrathin NiO film on a Ag(100) support as a proof-of-principle test case, and show how it gets reduced to supported Ni clusters under fields exceeding the threshold of +0.9 V nm(-1). Using an effective model, we trace the observed interfacial redox process down to a dissociative electron attachment resonant mechanism. The proposed approach can be easily implemented and generally applied to a wide range of interfacial systems, thus opening new opportunities for the manipulation of film growth and reaction processes at solid surfaces under strong external fields. (literal)
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