thermal properties of In-Sb-Te thin films for phase change memory application (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• thermal properties of In-Sb-Te thin films for phase change memory application (Contributo in atti di convegno) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/AST.95.113 (literal)

Alternative label

• Huu Tan Nguyen * , Andrzej Kusiak, Jean Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti, Massimo Longo (2014)
  thermal properties of In-Sb-Te thin films for phase change memory application
  in CIMTE 2014 - 6th Forum on New Materials - Part C, Montecatini Terme (Italy), 15-19 June 2014
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Huu Tan Nguyen * , Andrzej Kusiak, Jean Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti, Massimo Longo (literal)

Pagina inizio

• 119 (literal)

Pagina fine

• 119 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 95 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratory I2M, UMR CNRS univ. Bordeaux, France Laboratorio MDM, IMM-CNR, Agrate Brianza, Italy (literal)

Titolo

• thermal properties of In-Sb-Te thin films for phase change memory application (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Pietro Vincenzini (literal)

Abstract

• Phase change memories (PCM) are typically based on compounds of the Ge-Sb-Te (GST) ternary system. Nevertheless, a major drawback of PCM devices based on GST is the low crystallization temperature, which prevents the fulfillment of automotive-level or military-grade requirements (125°C continuous operation). To overcome this limitation, alloys belonging to the In-Sb-Te (IST) system have been proposed, which have demonstrated high crystallization temperature, and fast switching. Thermal properties of the chalcogenide alloy and of its interfaces within the PCM cell are key parameters versus the programming current, reliability and optimized scaling of PCM devices. The Modulated Photothermal Radiometry (MPTR) technique was implemented to measure the thermal conductivity of IST thin films as well as the thermal boundary resistance at the interface with other surrounding materials (a metal and a dielectric). The experiment was carried out in situ from room temperature up to 550°C in order to investigate the intrinsic thermal properties at different temperatures and the significant structural rearrangement upon the phase transition. Two different stoichiometries for the IST ternary alloy were deposited by Metal Organic Chemical Vapor Deposition (MOCVD) on a Si substrate covered with thermal SiO2 and then capped with a Platinum layer that acts as an optical and thermal transducer. Additional data from Raman and XRD lead to complementary analysis. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• ROBERTO FALLICA (Persona)
• MASSIMO LONGO (Unità di personale interno)
• ALESSIO LAMPERTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "thermal properties of In-Sb-Te thin films for phase change memory application" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)
• CLAUDIA WIEMER (Unità di personale interno)
• ALESSIO LAMPERTI (Unità di personale interno)
• ROBERTO FALLICA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Insieme di parole chiave di

• Parole chiave di "thermal properties of In-Sb-Te thin films for phase change memory application" (Insieme di parole chiave)