Thermal properties of In-Sb-Te films and interfaces for phase change memory devices (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Thermal properties of In-Sb-Te films and interfaces for phase change memory devices (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mee.2013.10.021 (literal)

Alternative label

• Fallica, Roberto; Wiemer, Claudia; Stoycheva, Toni; Cianci, Elena; Longo, Massimo; Huu Tan Nguyen; Kusiak, Andrzej; Battaglia, Jean-Luc (2014)
  Thermal properties of In-Sb-Te films and interfaces for phase change memory devices
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fallica, Roberto; Wiemer, Claudia; Stoycheva, Toni; Cianci, Elena; Longo, Massimo; Huu Tan Nguyen; Kusiak, Andrzej; Battaglia, Jean-Luc (literal)

Pagina inizio

• 3 (literal)

Pagina fine

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 120 (literal)

Rivista

• Microelectronic engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR; Universite de Bordeaux - PRES (literal)

Titolo

• Thermal properties of In-Sb-Te films and interfaces for phase change memory devices (literal)

Abstract

• The thermal properties of two different compositions (Te 12 and 17 at.%) of In-Sb-Te, obtained by metalorganic chemical vapour deposition, were investigated by the 3 omega method. The thermal conductivity of these chalcogenides, of interest for phase change memory applications, was found to decrease with increasing tellurium content. Thermal treatment at 480 degrees C of these materials caused an increase of their crystallinity and improved the thermal conductivity. However, this effect was more marked in the Te-poor composition than in the Te-rich one. In addition, the thermal boundary resistance between In-Sb-Te and various capping dielectrics (SiO2, Si3N4 and Al2O3) was measured and it was found to be closely correlated to the interlayer roughness, as indicated by X-ray reflectivity. In this regard, silicon oxide and alumina yielded a smoother and less resistive interface with In-Sb-Te than silicon nitride. (C) 2013 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• MASSIMO LONGO (Unità di personale interno)
• ROBERTO FALLICA (Persona)
• ELENA CIANCI (Persona)

Insieme di parole chiave

• Keywords of "Thermal properties of In-Sb-Te films and interfaces for phase change memory devices" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)
• CLAUDIA WIEMER (Unità di personale interno)
• ELENA CIANCI (Persona)
• ROBERTO FALLICA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)

Insieme di parole chiave di

• Keywords of "Thermal properties of In-Sb-Te films and interfaces for phase change memory devices" (Insieme di parole chiave)