Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/am405617q (literal)

Alternative label

• Cianci, Elena; Molle, Alessandro; Lamperti, Alessio; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco (2014)
  Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition
  in ACS applied materials & interfaces (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cianci, Elena; Molle, Alessandro; Lamperti, Alessio; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco (literal)

Pagina inizio

• 3455 (literal)

Pagina fine

• 3461 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• ACS applied materials & interfaces (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR; University of Milano-Bicocca (literal)

Titolo

• Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (literal)

Abstract

• Al:HfO2 is grown on III-V compound substrates by atomic layer deposition after an in situ trimethylaluminum-based preconditioning treatment of the III-V surface. After post-deposition rapid thermal annealing at 700 degrees C, the cubic/tetragonal crystalline phase is stabilized and the chemical composition of the stack is preserved. The observed structural evolution of Al:HfO2 on preconditioned III-V substrates shows that the in-diffusion of semiconductor species from the substrate through the oxide is inhibited. Al-induced stabilization of the Al:HfO2 crystal polymorphs up to 700 degrees C can be used as a permittivity booster methodology with possibly important implications in the stack scaling issues of high-mobility III-V based logic applications. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ELENA CIANCI (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)
• CLAUDIA WIEMER (Unità di personale interno)
• SABINA SPIGA (Persona)
• MARCO FANCIULLI (Unità di personale esterno)
• ALESSANDRO MOLLE (Persona)

Insieme di parole chiave

• Keywords of "Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)
• ELENA CIANCI (Persona)
• MARCO FANCIULLI (Unità di personale esterno)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ACS applied materials & interfaces (Rivista)

Insieme di parole chiave di

• Keywords of "Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition" (Insieme di parole chiave)