Josephson effect in Al/Bi2Se3/Al coplanar hybrid devices (Articolo in rivista)

Type
Label
  • Josephson effect in Al/Bi2Se3/Al coplanar hybrid devices (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.physc.2014.04.047 (literal)
Alternative label
  • Galletti, L.; Charpentier, S.; Lucignano, P.; Massarotti, D.; Arpaia, R.; Tafuri, F.; Bauch, T.; Suzuki, Y.; Tagliacozzo, A.; Kadowaki, K.; Lombardi, F. (2014)
    Josephson effect in Al/Bi2Se3/Al coplanar hybrid devices
    in Physica. C, Superconductivity (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Galletti, L.; Charpentier, S.; Lucignano, P.; Massarotti, D.; Arpaia, R.; Tafuri, F.; Bauch, T.; Suzuki, Y.; Tagliacozzo, A.; Kadowaki, K.; Lombardi, F. (literal)
Pagina inizio
  • 162 (literal)
Pagina fine
  • 165 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 503 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • University of Naples Federico II; Consiglio Nazionale delle Ricerche (CNR); Chalmers University of Technology; Seconda Universita degli Studi di Napoli; University of Tsukuba (literal)
Titolo
  • Josephson effect in Al/Bi2Se3/Al coplanar hybrid devices (literal)
Abstract
  • The edge states of Topological Insulators (TI) are protected against backscattering, thanks to the topological properties arising from their band structure. Coupling a TI to a superconductor (S) can induce unconventional effects, including the creation of Majorana bound states (MBS). The fabrication of coplanar hybrid devices is a fundamental step to pave the way to the understanding of proximity effects in topologically non-trivial systems, and to a large variety of experiments aimed at the possible detection of MBS. We discuss the feasibility and some relevant properties of Al-Bi2Se3-Al coplanar proximity devices. Special attention is devoted to the design of the junction, aimed at enhancing the coupling between the electrodes and the TI. (C) 2014 Elsevier B.V. All rights reserved. (literal)
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