Pinning mechanism in electron-doped HTS NdCeCuO epitaxial films (Articolo in rivista)

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  • Pinning mechanism in electron-doped HTS NdCeCuO epitaxial films (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0953-2048/27/12/124011 (literal)
Alternative label
  • A Guarino, A Leo, G Grimaldi, N Martucciello, C Dean, M N Kunchur, S Pace and A Nigro (2014)
    Pinning mechanism in electron-doped HTS NdCeCuO epitaxial films
    in Superconductor science and technology (Print); IOP PUBLISHING LTD, BRISTOL, BS1 6NX (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A Guarino, A Leo, G Grimaldi, N Martucciello, C Dean, M N Kunchur, S Pace and A Nigro (literal)
Pagina inizio
  • 124011 (literal)
Pagina fine
  • 124015 (literal)
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  • http://iopscience.iop.org/0953-2048/27/12/124011/pdf/0953-2048_27_12_124011.pdf (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 27 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno I-84084 Fisciano (SA), Italy CNR-SPIN Salerno, Universitá di Salerno, I-84084 Fisciano (SA), Italy Department of Physics and Astronomy, University of South Carolina, Columbia, SC 29208, USA (literal)
Titolo
  • Pinning mechanism in electron-doped HTS NdCeCuO epitaxial films (literal)
Abstract
  • The electrical transport properties of c-axis oriented Nd1.85Ce0.15CuO4-? superconducting films have been investigated to analyze the pinning mechanism in this material. The samples were grown on SrTiO3 substrates using the dc sputtering high-pressure technique, whereas a detailed analysis of the structure and local composition of the films has been achieved using high- resolution electron microscopy and x-ray microanalysis. Magneto-resistance and current-voltage measurements, in the temperature range from 1.6 to 300 K and in magnetic field up to 9 T, have been reported. In particular, the anisotropic coefficient defined as the ratio between the parallel upper critical field, ?Hc2 ab, and the perpendicular one, ?Hc2 c, has been evaluated, pointing out the high anisotropy of this compound. Furthermore, the vortex activation energy as a function of the applied magnetic fi ld, parallel and perpendicular to the CuO2 planes, has been derived and compared with the flux-pinning forces to enlighten the peculiar nature of pinning centers in this material. (literal)
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