Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer (Articolo in rivista)

Type
Label
  • Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.3390/s130202475 (literal)
Alternative label
  • Currie, Marc; Dianat, Pouya; Persano, Anna; Martucci, Maria Concetta; Quaranta, Fabio M.; Cola, Adriano; Nabet, Bahram (2013)
    Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer
    in Sensors (Basel)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Currie, Marc; Dianat, Pouya; Persano, Anna; Martucci, Maria Concetta; Quaranta, Fabio M.; Cola, Adriano; Nabet, Bahram (literal)
Pagina inizio
  • 2475 (literal)
Pagina fine
  • 2483 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/record/display.url?eid=2-s2.0-84875184079&origin=inward (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 13 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Naval Research Laboratory; Drexel University; Consiglio Nazionale delle Ricerche (literal)
Titolo
  • Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer (literal)
Abstract
  • Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster-~6 ps for a cathode-anode separation of 1.3 ?m and ~12 ps for distances more than 3 ?m. © 2013 by the authors; licensee MDPI, Basel, Switzerland. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it