H irradiation effects on the GaAs-like Raman modes in GaAs1-N-x(x)/GaAs1-N-x(x):H planar heterostructures (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• H irradiation effects on the GaAs-like Raman modes in GaAs1-N-x(x)/GaAs1-N-x(x):H planar heterostructures (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4905097 (literal)

Alternative label

• Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S. (2014)
  H irradiation effects on the GaAs-like Raman modes in GaAs1-N-x(x)/GaAs1-N-x(x):H planar heterostructures
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 116 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 24 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• University of Pavia; Sapienza University Rome; Lab Nazl TASC IOM CNR; Consiglio Nazionale delle Ricerche (CNR) (literal)

Titolo

• H irradiation effects on the GaAs-like Raman modes in GaAs1-N-x(x)/GaAs1-N-x(x):H planar heterostructures (literal)

Abstract

• The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs1-N-x(x)/GaAs1-N-x(x):H microwire heterostructures-with similar N concentration, but different H dose and implantation conditions-has been investigated by micro-Raman mapping. In the case of GaAs0.991N0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs0.992N0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence. (C) 2014 AIP Publishing LLC. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FAUSTINO MARTELLI (Persona)
• SILVIA RUBINI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FAUSTINO MARTELLI (Persona)
• SILVIA RUBINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)