Temperature dependence of gap related structures in YBa2Cu3O7-delta break junctions (Articolo in rivista)

Type
Label
  • Temperature dependence of gap related structures in YBa2Cu3O7-delta break junctions (Articolo in rivista) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1142/S0217979200003344 (literal)
Alternative label
  • Giubileo, F; Bobba, F; Cucolo, AM; Akimenko, AI (2000)
    Temperature dependence of gap related structures in YBa2Cu3O7-delta break junctions
    in International journal of modern physics b
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giubileo, F; Bobba, F; Cucolo, AM; Akimenko, AI (literal)
Pagina inizio
  • 3080 (literal)
Pagina fine
  • 3085 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 14 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 25-27 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • University of Salerno; Consiglio Nazionale delle Ricerche (CNR); B Verkin Inst Low Temp Phys & Engn (literal)
Titolo
  • Temperature dependence of gap related structures in YBa2Cu3O7-delta break junctions (literal)
Abstract
  • We have applied the break junction technique to highly epitaxial c-axis oriented YBaCuO thin films with T-c(rho =0)=91K deposited on (001) SrTiO3 or LaAlO3 substrates by a high oxygen pressure d.c. sputtering technique. The film thickness was about 1500 Angstrom and a photolithographic process was used to reduce to 100 mum the junction width across the fracture. By this procedure, tunable resistance break junctions with tunneling current favored dong the ab-planes have been realized. The junctions were formed at low temperatures with freshly fractured surfaces and an inert tunnel barrier was created by helium gas or liquid. A good stability was obtained with the normal-state resistance R-N changing about 15% in the temperature range between 4.2 K and 100 K. We have measured the temperature dependence of the conductance maxima that are related to superconducting energy gap at the Fermi level. (literal)
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